Edward Ong, senior product marketing manager at Power Integrations said: “The Qrr of these new Qspeed diodes is half that of the next best ultra-fast silicon diodes, resulting in very high system ...

This technical article gives you information on the advantages of Silicon Carbide Schottky Diodes over Silicon Rectifiers and how Silicon Rectifiers can compete with SiC Diodes. It also explains why ...

Developed by Power Integrations, the 600-V 12-A diodes feature reverse-recovery charge claimed to be the lowest in the industry. Generally speaking, silicon-carbide (SiC) technology provides superior ...

Vishay Intertechnology, Inc. has announced the launch of three new Gen 3 650 V and 1200 V silicon carbide Schottky diodes, specifically the VS-3C01EJ12-M3, VS-3C02EJ07-M3, and VS-3C02EJ12-M3, which ...

The paper represents the electrical behaviour of a new Gallium Arsenide (GaAs) power Schottky Diode compared to the bipolar silicon diodes. The paper also introduces its electrical measurements ...

TOKYO--(BUSINESS WIRE)--Toshiba Corporation’s (TOKYO: 6502) Semiconductor & Storage Products Company today announced that it will expand its family of 650V silicon carbide (SiC) schottky barrier ...

Cree, Inc. announces availability of its Silicon Carbide (SiC) power products, world-class 600V SiC Junction Barrier Schottky (JBS) diodes. Cree, Inc. announces availability of its Silicon Carbide ...

A new diode looks set to steal the humble LED's thunder. Dubbed a diode for light, and crafted using standard silicon chip fabrication techniques, this is a key discovery that will pave the path to ...

UNSW researchers have developed an intrinsic-adjusted single-diode model that explicitly accounts for radiative and Auger ...

SAN JOSE, Calif.--(BUSINESS WIRE)--Power Integrations (Nasdaq: POWI), the leader in high-voltage integrated circuits for energy-efficient power conversion, today announced its 600 V 12 A Qspeed diode, ...