(Nanowerk News) Takashi Matsukawa and Meishoku Masahara and others, Silicon Nano-Device Group, the Nanoelectronics Research Institute of the National Institute of Advanced Industrial Science and ...
Four-Period Vertically Stacked SiGe/Si Channel FinFET Fabrication and Its Electrical Characteristics
Li Y, Zhao F, Cheng X, Liu H, Zan Y, Li J, Zhang Q, Wu Z, Luo J, Wang W. Four-Period Vertically Stacked SiGe/Si Channel FinFET Fabrication and Its Electrical Characteristics. Nanomaterials (Basel).
imec has presented a tungsten (W) buried power rail (BPR) integration scheme in a FinFET CMOS test vehicle, which does not impact the CMOS device characteristics. Using this week's 2020 Symposia on ...
Imec reports improved performance for both Ge-based n-type FinFETs and Ge-based p-type gate-all-around (GAA) devices. For Ge n-type FinFETs, pre-gate stack process optimization dramatically improved ...
November 9, 2013. Imec announced that it has successfully demonstrated the first III-V compound semiconductor FinFET devices integrated epitaxially on 300-mm silicon wafers, through a unique silicon ...
As the dimensions of devices scale down, the variations in the electrical parameters of CMOS transistors steadily increase. This is due to random fluctuations in the density of the dopants in the ...
Analog design has never been easy. Engineers can spend their entire careers focused just on phase-locked loops (PLLs), because to get them right the functionality of circuits need to be understood in ...
Since the advent of semiconductors and throughout the long history of designing integrated circuits for everything from computer hardware to multifunction mobile devices, the basic tenet of Moore's ...
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