Teledyne e2v HiRel Announces New 100 V High-Speed 20 MHz FET and GaN Transistor Driver Flip Chip Die
MILPITAS, Calif.--(BUSINESS WIRE)--Teledyne e2v HiRel announces the new TD99102 UltraCMOS ® High-speed FET and GaN transistor driver offering very high switching speed of 20 MHz. The new flip-chip ...
STMicroelectronics has created its first galvanically isolated gate driver for GaN transistors. Called STGAP2GS the wide body SO-8W packaged single-channel driver can work with rails up to 1.2kV. The ...
A new gate driver claims to ease the adoption of gallium nitride (GaN) technology in consumer and industrial applications such as power supplies in computer servers, factory-automation equipment, ...
MUNICH, Germany--(BUSINESS WIRE)--Panasonic Corporation today announced that it will start mass production of a high-speed gate driver (AN34092B) optimized for driving its GaN power transistor X-GaN ...
While attending APEC 2019, it seemed that gallium-nitride (GaN) transistors were just coming into their own in high-volume applications, while silicon-carbide (SiC) transistors have found wide ...
For decades, the semiconductor industry has been laser-focused on shrinking silicon transistors, but Peking University researchers believe the future might lie in changing materials entirely. In a ...
Infineon Technologies is to integrate 600 and 700V GaN power hemts alongside gate driver chips inside single packages, in 5 x 6mm or 6 x 8mm SMD packages. IGI70NxxxA2xS is to be a 700V range that ...
Solenoids and relays used in electronic control applications consume lots of power. The current required for activation is typically three to 10 times higher than the minimum needed to hold the relay ...
Experience low power, high security, and reliable performance with PolarFire® Core & SoC FPGAs. A maker recently demonstrated how to build a fully functional self timing electric motor using only ...
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